鈥?/div>
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
10藲
0.40
+0.10
鈥?.05
3
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
0.16
+0.10
鈥?.06
1
2
(0.65)
(0.95) (0.95)
1.9
鹵0.1
2.90
+0.20
鈥?.05
1.1
+0.2
鈥?.1
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
鈭?5
鈭?0
鈭?
鈭?00
鈭?
200
150
鈭?5
to
+150
V
V
V
mA
A
mW
擄C
擄C
Marking Symbol: 1A
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*1
*1
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE1 *2
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= 鈭?0 碌A(chǔ),
I
E
=
0
I
C
= 鈭?
mA, I
B
=
0
I
E
= 鈭?0 碌A(chǔ),
I
C
=
0
V
CB
= 鈭?5
V, I
E
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
CE
= 鈭?
V, I
C
= 鈭?00
mA
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?00
mA, I
B
= 鈭?0
mA
I
C
= 鈭?00
mA, I
B
= 鈭?0
mA
V
CB
= 鈭?0
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= 鈭?0
V, I
E
=
0, f
=
1 MHz
Min
鈭?5
鈭?0
鈭?
Typ
0 to 0.1
Parameter
Symbol
Rating
Unit
1.1
+0.3
鈥?.1
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Max
Unit
V
V
V
鈭?00
鈭?
90
25
鈭?/div>
0.2
150
15
鈭?/div>
0.4
鈭?.2
220
nA
碌A(chǔ)
錚?/div>
錚?/div>
V
V
MHz
pF
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common-emitter reverse transfer)
*1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
Q
90 to 155
R
130 to 220
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2003
SJC00054BED
0.4
鹵0.2
5藲
1
next
2SB0779|2SB779相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
Silicon PNP epitaxial planer type
PANASONIC
-
英文版
Silicon PNP epitaxial planer type
PANASONIC ...
-
英文版
Silicon PNP epitaxial planar type
PANASONIC
-
英文版
Silicon PNP epitaxial planar type
PANASONIC ...
-
英文版
For low-frequency general amplification
PANASONIC
-
英文版
For low-frequency general amplification
PANASONIC ...
-
英文版
For low-frequency general amplification
PANASONIC
-
英文版
For low-frequency general amplification
PANASONIC ...
-
英文版
Silicon PNP epitaxial planar type
PANASONIC
-
英文版
Silicon PNP epitaxial planar type
PANASONIC ...
-
英文版
Silicon PNP epitaxial planer type
PANASONIC ...
-
英文版
For general amplification
PANASONIC
-
英文版
For general amplification
PANASONIC ...
-
英文版
Silicon PNP epitaxial planer type(For low-frequency and low-...
PANASONIC
-
英文版
Silicon PNP epitaxial planer type(For low-frequency and low-...
PANASONIC ...
-
英文版
Silicon PNP epitaxial planer type(For low-frequency output a...
PANASONIC
-
英文版
Silicon PNP epitaxial planer type(For low-frequency output a...
PANASONIC ...
-
英文版
Silicon PNP epitaxial planer type
PANASONIC
-
英文版
Silicon PNP epitaxial planer type
PANASONIC ...
-
英文版
Silicon PNP epitaxial planer type(For low-frequency amplific...
PANASONIC